pr\u00e9sentent<\/p>\n\n\n\n
Autoris\u00e9 \u00e0 pr\u00e9senter ses travaux en vue de l\u2019obtention du Doctorat de l’Institut Polytechnique de Paris, pr\u00e9par\u00e9 \u00e0 T\u00e9l\u00e9com SudParis en :<\/p>\n\n\n\n
le LUNDI 4 D\u00c9CEMBRE 2023 \u00e0 14h00<\/p>\n\n\n\n
\u00e0<\/p>\n\n\n\n
Amphi 4
Institut Mines-T\u00e9l\u00e9com 19 place Marguerite PEREY, 91120 Palaiseau<\/p>\n\n\n\n
Membres du jury :<\/strong><\/p>\n\n\n\n M. Badr-Eddine BENKELFAT<\/strong>, Professeur, T\u00e9l\u00e9com SudParis, FRANCE – Directeur de these R\u00e9sum\u00e9 :<\/strong><\/p>\n\n\n\n La plate-forme d’int\u00e9gration III-V h\u00e9t\u00e9rog\u00e8ne sur silicium appara\u00eet comme une solution \u00e9l\u00e9gante pour la co-int\u00e9gration des fonctions optiques avec leurs pilotes \u00e9lectroniques. L’un des principaux \u00e9l\u00e9ments constitutifs des r\u00e9seaux de m\u00e9tro et d’acc\u00e8s est la diode laser \u00e0 r\u00e9troaction distribu\u00e9e. La premi\u00e8re implantation de ce composant en 1971 r\u00e9v\u00e8le un r\u00e9el potentiel pour les t\u00e9l\u00e9communications. Cependant, ce type de composant est limit\u00e9 en ce qui concerne l’accordabilit\u00e9 rapide en longueur d’onde et la largeur de raie. Dans la premi\u00e8re partie de cette th\u00e8se nous pr\u00e9senterons la Croissance S\u00e9lective de Zone (SAG) sur silicium greff\u00e9. Il s’agit d’une technique d’\u00e9pitaxie consistant en la mise en place de motifs de croissance bloquants sur la plaquette permettant des effets de diffusion cr\u00e9ant des variations d’\u00e9paisseur qui sont directement li\u00e9es \u00e0 la bande interdite des puits quantiques. Nous pr\u00e9senterons nos travaux sur le d\u00e9veloppement de SAG pour l’int\u00e9gration d’un r\u00e9seau \u00e0 quatre canaux de lasers DFB modul\u00e9s par \u00e9lectro-absorption. Dans la deuxi\u00e8me et la troisi\u00e8me partie de cette th\u00e8se, nous pr\u00e9senterons deux variantes de conception pour faire face aux limites pr\u00e9c\u00e9demment cit\u00e9es des lasers DFB. La deuxi\u00e8me partie porte sur l’\u00e9tude d’un laser DFB capacitivement accordable. Dans ce composant, le guide d’ondes en silicium est dop\u00e9 de sorte que la structure P-Si\/SiO2\/N-InP forme une capacit\u00e9 semi-conducteur-isolant-semi-conducteur \u00e0 l’int\u00e9rieur de la cavit\u00e9 laser permettant un r\u00e9glage rapide, continu et \u00e0 faible consommation d’\u00e9nergie de la fr\u00e9quence laser. nous d\u00e9montrons un balayage de fr\u00e9quence continu de 10 GHz sur une \u00e9chelle de temps de deux nanosecondes. La troisi\u00e8me partie pr\u00e9sente la d\u00e9monstration exp\u00e9rimentale du verrouillage de mode dans une bande interdite III-V sur silicium DFB. Le r\u00e9seau chirp\u00e9 forme un puits de potentiel photonique parabolique. ce type de puits prend en charge des modes hermite-gaussiens uniform\u00e9ment espac\u00e9s \u00e0 Q \u00e9lev\u00e9 qui peuvent \u00eatre verrouill\u00e9s en phase via des m\u00e9canismes de verrouillage de modes. Nous pr\u00e9sentons les possibilit\u00e9s de conception pour la variation de dimension du r\u00e9seau et une caract\u00e9risation du composant. Les spectres \u00e9lectriques sont mesur\u00e9s avec et sans signal de commande micro-onde pour stabiliser le peigne de fr\u00e9quences. Nous avons finalement tir\u00e9 des conclusions et pr\u00e9sent\u00e9 des perspectives \u00e0 court terme.<\/p>\n\n\n\n Heterogeneous III-V on silicon integration platform appears as an elegant solution for co-integration of optical functions with their electronic drivers. One of the main building block of metro and access networks is the Distributed Feedback laser diode. The first implementation of this component in 1971 reveals a real potential for telecommunications. However, this type of component is limited in regards to fast wavelength tunability and linewidth. In the first part of this thesis we will present Selective Area Growth (SAG) on bonded silicon. It is an epitaxy technique consisting in the implementation of blocking growth patterns on the wafer enabling diffusion effects creating thickness variations which is directly linked to quantum wells bandgap. we will present our work on the development of SAG for the integration of a four channel array of electro-absorption modulated DFB lasers. In the second and third part of this thesis we will present two design variations to cope with the previously cited limits of DFB Lasers. Second part is about the study of a capacitively tunable DFB lasers. In this component the silicon waveguide is doped so the P-Si\/SiO2\/N-InP structure forms a Semiconductor-Insulator-Semiconductor capacitance inside the laser cavity enable fast, continuous and low power consuming way to tune the lasing frequency. we demonstrate a 10 GHz continuous frequency sweep in a two nanosecond time scale. The third part presents the experimental demonstration of the mode locking in an engineered bandgap III-V on silicon DFB. The chirped grating forms a parabolic photonic potential well. this type of well supports High Q evenly spaced Hermite-Gaussian modes that can be phase locked through mode locking mechanisms. We present the design possibilities for variation of grating dimension and a characterisation of the component. The Electrical spectra is measured with and without microwave driving signal to stabilize the frequency comb. We eventually draw conclusions and present short term perspectives.<\/p>\n","protected":false},"excerpt":{"rendered":" L’Ecole doctorale : Ecole Doctorale de l’Institut Polytechnique de Paris et le Laboratoire de recherche SAMOVAR – Services r\u00e9partis, Architectures, Mod\u00e9lisation, Validation, Administration des R\u00e9seaux pr\u00e9sentent l\u2019AVIS DE SOUTENANCE de Monsieur Pierre FANNEAU DE LA HORIE Autoris\u00e9 \u00e0 pr\u00e9senter ses travaux en vue de l\u2019obtention du Doctorat de l’Institut Polytechnique de Paris, pr\u00e9par\u00e9 \u00e0 T\u00e9l\u00e9com 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M. Joan RAMIREZ<\/strong>, Ing\u00e9nieur de recherche, III-V Lab, FRANCE – CoDirecteur de these
M. Abderrahim RAMDANE<\/strong>, Directeur de recherche, C2N (Centre de Nanosciences et Nanotechnologies) CNRS-UPSay, FRANCE – Rapporteur
M. Guang-Hua DUAN<\/strong>, Directeur de recherche, 3SP Technologies, FRANCE – Rapporteur
Mme Ghaya BAILI<\/strong>, Ing\u00e9nieure de recherche, Thales Research & Technologies, FRANCE – Examinateur<\/p>\n\n\n\n\u00ab Lasers H\u00e9t\u00e9rog\u00e8nes III-V\/Si \u00e0 R\u00e9troaction Distribu\u00e9e Avanc\u00e9s \u00bb<\/h2>\n\n\n\n
pr\u00e9sent\u00e9 par Monsieur Pierre FANNEAU DE LA HORIE<\/h2>\n\n\n\n
Abstract :<\/strong><\/p>\n\n\n\n