{"id":598,"date":"2015-11-12T16:31:00","date_gmt":"2015-11-12T15:31:00","guid":{"rendered":"https:\/\/samovar2022.int-evry.fr\/index.php\/2015\/11\/12\/soutenance-de-these-etude-dun-recepteur-pre-amplifie-de-type-pic-photonic-integrated-circuit-realise-par-integration-monolithique\/"},"modified":"2020-09-04T18:46:33","modified_gmt":"2020-09-04T16:46:33","slug":"soutenance-de-these-etude-dun-recepteur-pre-amplifie-de-type-pic-photonic-integrated-circuit-realise-par-integration-monolithique","status":"publish","type":"post","link":"https:\/\/samovar.telecom-sudparis.eu\/index.php\/2015\/11\/12\/soutenance-de-these-etude-dun-recepteur-pre-amplifie-de-type-pic-photonic-integrated-circuit-realise-par-integration-monolithique\/","title":{"rendered":"Soutenance de Th\u00e8se: \u00ab\u00a0\u00ab Etude d\u2019un r\u00e9cepteur pr\u00e9-amplifi\u00e9 de type PIC (Photonic Integrated Circuit) r\u00e9alis\u00e9 par int\u00e9gration monolithique\u00bb"},"content":{"rendered":"

L\u2019AVIS DE SOUTENANCE De Maria ANAGNOSTI<\/strong><\/p>\n

Autoris\u00e9(e) \u00e0 pr\u00e9senter ses travaux en vue de l\u2019obtention du Doctorat de T\u00e9l\u00e9com SudParis en :<\/p>\n

Electronique et T\u00e9l\u00e9communications<\/p>\n

\u00ab Etude d’un r\u00e9cepteur pr\u00e9-amplifi\u00e9 de type PIC (Photonic Integrated Circuit) r\u00e9alis\u00e9 par int\u00e9gration monolithique d’un amplificateur (SOA) optique \u00e0 semi-conducteur et d’une photodiode (UTC) pour les liaisons courtes distances \u00e0 100 Gbit\/s et au-del\u00e0 \u00bb<\/p>\n

Le 13 novembre 2015 – Amphi Grenat – 14h00<\/strong><\/p>\n

A T\u00e9l\u00e9com ParisTech<\/p>\n

Membres du jury :<\/strong><\/p>\n

Rapporteur<\/em> – Hercules AVRAMOPOULOS – Professeur – Photonics Communication Research Laboratory – National Technical University of Athens – Gr\u00e8ce<\/p>\n

Rapporteur <\/em> – Jean-Pierre VILCOT – Directeur de recherche CNRS – DHS-OPTO – Institut d’Electronique, de Micro\u00e9lectronique et de Nanotechnologie<\/p>\n

Examinateur <\/em> – Philippe CHANCLOU – Ing\u00e9nieur R&D – HDR – Orange Labs – France<\/p>\n

Examinateur <\/em> – Aziz BENLARBI-DELA\u00cf – Professeur – Universit\u00e9 Paris 6 – France<\/p>\n

Examinateur <\/em> – Mohand ACHOUCHE – Docteur – Responsable industriel – Chef Dpt III-V Lab – Alcatel-Lucent Bell Labs – III-V Lab-France<\/p>\n

Directeur\/trice <\/em> – Badr-Eddine BENKELFAT – Professeur – HDR – T\u00e9l\u00e9com SudParis<\/p>\n

R\u00e9sum\u00e9 :<\/strong><\/p>\n

Ce travail porte sur la conception, la fabrication et la caract\u00e9risation d\u2019une photodiode tr\u00e8s haut d\u00e9bit (UTC PD) et son int\u00e9gration avec un pr\u00e9amplificateur optique \u00e0 semi-conducteur (SOA) pour les liaisons optiques \u00e0 courte distance \u00e0 100 Gbit\/s en bandes C et O. Il porte \u00e9galement sur la conception d’un duplexeur (Tx \/ Rx) avec liaison montante en bande C et liaison descendante en bande O. L’int\u00e9gration monolithique d\u2019un SOA avec une photodiode haut d\u00e9bit sans filtre optique entre les deux pr\u00e9sente des avantages majeurs parmi lesquels: – Augmentation de la distance de transmission. – Augmentation du nombre d’utilisateurs connect\u00e9s. – Diminution des co\u00fbts globaux de fabrication incluant l\u2019assemblage. La premi\u00e8re partie de cette \u00e9tude porte sur l’optimisation SOA pour un fonctionnement \u00e0 forte puissance (Psat). Un faible facteur de bruit (NF) et une faible d\u00e9pendance \u00e0 la polarisation (PDL) sont requis pour les r\u00e9cepteurs pr\u00e9amplifi\u00e9s. De plus, un fonctionnement du et op\u00e9rer en r\u00e9gime lin\u00e9aire est n\u00e9cessaire pour les sch\u00e9mas de modulation complexes. Le SOA actuel poss\u00e8de un gain de 18 dB avec un facteur de bruit de 8 dB, une faible PDL (<2 dB), et une bonne puissance de saturation en entr\u00e9e (-8 dBm). Gr\u00e2ce \u00e0 l\u2019optimisation de la structure verticale du SOA et de son couplage avec la fibre les performances attendues sont am\u00e9liores : Psat >-5 dBm, NF <8 dB, PDL et gain similaire. D'autre part, les interconnexions \u00e9lectriques de la photodiode ont \u00e9t\u00e9 optimis\u00e9es ce qui a permis de d\u00e9montrer des photodiodes avec une bande passante sup\u00e9rieure \u00e0 100 GHz. Les photodiodes pr\u00e9sentent un fort coefficient de r\u00e9ponse (R) (0,6 A\/W \u00e0 1,3 \u03bcm et 0,55 A\/W \u00e0 1,55 \u03bcm) et une faible PDL <1 dB. Un fort courant de saturation de 14 mA \u00e0 100 GHz a aussi \u00e9t\u00e9 d\u00e9mont\u00e9. Enfin, la caract\u00e9risation des SOA-UTC r\u00e9alis\u00e9s a montr\u00e9 simultan\u00e9ment une tr\u00e8s forte responsivit\u00e9 (95\nA\/W), une faible d\u00e9pendance \u00e0 la polarisation PDL (<2 dB), un faible NF (8 dB) et une large bande passante \u00e0 3 dB (> 95 GHz), qui placent nos composants au meilleur niveau de l\u2019\u00e9tat de l\u2019art avec un produit gain-bande record de 6,1 THz. Les Mesures num\u00e9riques \u00e0 64 Gbit\/s montrent que notre r\u00e9cepteur atteint une sensibilit\u00e9 de -17 dBm pour un taux d’erreur de 10-9, et la sensibilit\u00e9 attendue \u00e0 100 Gbit\/s est
\nde -14 dBm.<\/p>\n

Abstract :<\/strong><\/p>\n

This work focuses on the design, fabrication and measurements of a uni-travelling carrier high speed photodiode (UTC PD) and its integration with a semiconductor optical preamplifier (SOA) for short reach 100 Gbit\/s optical links, in O- and C- bands. This work also focuses on the design of a duplexer (Tx\/Rx) with downstream in O-band and upstream in C-band. The SOA monolithic integration with a high speed
\nPD without an optical filter in between yields major benefits among which: – Increase in the transmission distance. – Increase in the split ratio correlated to the number of connected users. – Decrease of the overall fabrication and assembling cost.
\nThe first part of this work is dedicated to optimizing the SOA for high power operation (Psat). The low noise figure (NF), and polarization dependence loss (PDL) are critical parameters for a preamplified receiver. Also complex modulation formats require linear gain regime of the SOA. The current SOA presents 18 dB gain with NF (8 dB), low PDL (<2 dB), and good input power saturation (-8 dBm). Thanks to further optimization of the SOA vertical structure and coupling with the optical fiber, the expected SOA performance is higher Psat >-5 dBm, NF <8 dB, similar PDL and gain.\nSecondly, the electrical interconnects of the photodiode is optimized to increase the photodiodes\u2019 bandwidth, which allows to demonstrate photodiode with >100 GHz bandwidth. The PD presents high responsivity (R) (0,6 A\/W at 1,3 \u03bcm and 0.55 A\/W at 1,55 \u03bcm) and low PDL <1 dB. Also the saturation photocurrent is high (14 mA at 100 GHz). Finally, the SOA-UTC demonstrates high resoponsivity (95 A\/W), low PDL (<2 dB), low NF (8 dB) and a wide 3 dB bandwidth (>95 GHz), which yields a record gain-bandwidth product of 6.1 THz. Large signal measurements at 64 Gbit\/s show that our receiver reaches a low sensitivity of -17 dBm for a bit error rate of 10-9, and is expected to reach -14 dBm at 100 Gbit\/s.<\/p>\n","protected":false},"excerpt":{"rendered":"

L\u2019AVIS DE SOUTENANCE De Maria ANAGNOSTI Autoris\u00e9(e) \u00e0 pr\u00e9senter ses travaux en vue de l\u2019obtention du Doctorat de T\u00e9l\u00e9com SudParis en : Electronique et T\u00e9l\u00e9communications \u00ab Etude d’un r\u00e9cepteur pr\u00e9-amplifi\u00e9 de type PIC (Photonic Integrated Circuit) r\u00e9alis\u00e9 par int\u00e9gration monolithique d’un amplificateur (SOA) optique \u00e0 semi-conducteur et d’une photodiode (UTC) pour les liaisons courtes distances 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